2SA965TM -0.8a , -120v pnp plastic encapsulated transistor elektronische bauelemente 17-aug-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features complementary to 2sc2235 power amplifier applications classification of h fe product-rank 2sa965-o 2sa965-y range 80-160 120-240 absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -120 v collector to emitter voltage v ceo -120 v emitter to base voltage v ebo -5 v collector current - continuous i c -0.8 a collector power dissipation p c 0.9 w thermal resistance, junction to ambient r ja 139 c/w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo -120 - - v i c = -1ma, i e =0 collector to emitter breakdown voltage v (br)ceo -120 - - v i c = -10ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -1ma, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -120v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -5v, i c =0 dc current gain h fe 80 - 240 v ce = -5v, i c = -100ma collector to emitter saturation voltage v ce(sat) - - -1 v i c = -500ma, i b = -50ma base to emitter saturation voltage v be - - -1 v v ce = -5v, i c = -0.5a transition frequency f t - 120 - mhz v ce = -5v, i c = -100ma collector output capacitance c ob - - 40 pf v cb = -10v, i e =0, f=1mhz to-92mod 1 11 1 emitter 2 22 2 collector 3 33 3 base ref. millimeter ref. millimeter min. max. min. max. a 5.50 6.50 h 1. 70 2.05 b 8.00 9.00 j 2.70 3.20 c 12.70 14.50 k 0.85 1.15 d 4.50 5.30 l 1.60 max e 0.35 0.65 m 0.00 0.40 f 0.30 0.51 n 4.00 min g 1.50 typ. a c e k f d b g h j l m n
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